FDN361BN
onsemi
onsemi
MOSFET N-CH 30V 1.4A SUPERSOT3
$0.44
Available to order
Reference Price (USD)
3,000+
$0.18636
6,000+
$0.17433
15,000+
$0.16231
30,000+
$0.15389
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the FDN361BN by onsemi, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the FDN361BN is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 110mOhm @ 1.4A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 193 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Alpha & Omega Semiconductor Inc.
AOSS32136C
onsemi
NDD60N900U1T4G
IXYS
IXTN22N100L
Diodes Incorporated
DMP3028LFDE-13
Vishay Siliconix
SIHD6N65ET5-GE3
Vishay Siliconix
SIR586DP-T1-RE3
Vishay Siliconix
SI4896DY-T1-E3
Infineon Technologies
BSC034N10LS5ATMA1
Toshiba Semiconductor and Storage
TJ10S04M3L,LXHQ
Toshiba Semiconductor and Storage