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TJ10S04M3L,LXHQ

Toshiba Semiconductor and Storage
TJ10S04M3L,LXHQ Preview
Toshiba Semiconductor and Storage
MOSFET P-CH 40V 10A DPAK
$1.00
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
  • Vgs (Max): +10V, -20V
  • Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 27W (Tc)
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

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