IXTN22N100L
IXYS
IXYS
MOSFET N-CH 1000V 22A SOT227B
$55.29
Available to order
Reference Price (USD)
1+
$42.03000
10+
$39.30600
30+
$36.35200
100+
$34.08000
250+
$31.80800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXTN22N100L by IXYS is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IXTN22N100L is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 11A, 20V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 15 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 7050 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 700W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
Related Products
Diodes Incorporated
DMP3028LFDE-13
Vishay Siliconix
SIHD6N65ET5-GE3
Vishay Siliconix
SIR586DP-T1-RE3
Vishay Siliconix
SI4896DY-T1-E3
Infineon Technologies
BSC034N10LS5ATMA1
Toshiba Semiconductor and Storage
TJ10S04M3L,LXHQ
Toshiba Semiconductor and Storage
TK11S10N1L,LXHQ
Vishay Siliconix
SQSA80ENW-T1_GE3
Alpha & Omega Semiconductor Inc.
AOL1482
Alpha & Omega Semiconductor Inc.