IXFH30N85X
IXYS
IXYS
MOSFET N-CH 850V 30A TO247AD
$12.70
Available to order
Reference Price (USD)
1+
$9.88000
30+
$8.09767
120+
$7.30750
510+
$6.12251
1,020+
$5.53000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the IXFH30N85X single MOSFET from IXYS. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IXFH30N85X combines cutting-edge technology with IXYS's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 850 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 220mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 695W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
Related Products
Diodes Incorporated
DMTH6010LK3-13
Nexperia USA Inc.
PMPB11R2VPX
Diodes Incorporated
DMPH3010LK3-13
Infineon Technologies
IRFS4615TRLPBF
Alpha & Omega Semiconductor Inc.
AON6594
STMicroelectronics
STF11NM80
Vishay Siliconix
SIR681DP-T1-RE3
Taiwan Semiconductor Corporation
TSM60NB600CF C0G
Infineon Technologies
IPP020N08N5AKSA1
Sanyo