IXFK360N10T
IXYS
IXYS
MOSFET N-CH 100V 360A TO264AA
$13.76
Available to order
Reference Price (USD)
25+
$8.77400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the IXFK360N10T by IXYS, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IXFK360N10T is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 525 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 33000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1250W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264AA (IXFK)
- Package / Case: TO-264-3, TO-264AA
Related Products
onsemi
NTHL082N65S3HF
Infineon Technologies
AUIRF1405-INF
onsemi
NTMFS5C426NT1G
NXP USA Inc.
PSMN027-100XS,127
Toshiba Semiconductor and Storage
TK39N60W,S1VF
Diodes Incorporated
DMG2302UQ-13
Infineon Technologies
IPAW70R950CEXKSA1
onsemi
NVB5405NT4G
Infineon Technologies
IAUZ40N10S5N130ATMA1
Diodes Incorporated