NVB5405NT4G
onsemi
onsemi
NVB5405 - SINGLE N-CHANNEL POWER
$1.30
Available to order
Reference Price (USD)
1+
$1.30000
500+
$1.287
1000+
$1.274
1500+
$1.261
2000+
$1.248
2500+
$1.235
Exquisite packaging
Discount
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Meet the NVB5405NT4G by onsemi, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The NVB5405NT4G stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose onsemi.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 116A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 5.8mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 32 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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