IXFN36N100
IXYS
IXYS
MOSFET N-CH 1KV 36A SOT-227B
$65.26
Available to order
Reference Price (USD)
1+
$53.85000
10+
$50.36000
30+
$46.57600
100+
$43.66500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXFN36N100 from IXYS sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to IXYS's IXFN36N100 for their critical applications.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 700W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
Related Products
Nexperia USA Inc.
BUK7M33-60EX
Renesas Electronics America Inc
UPA2760T1A-E1-AT
Nexperia USA Inc.
PSMN011-60MLX
Infineon Technologies
IRFR9120NTRLPBF
onsemi
NDS352AP
onsemi
FCD2250N80Z
Infineon Technologies
IPD60R280P7SE8228AUMA1
IXYS
IXFH16N50P3
STMicroelectronics
STH110N10F7-2
Infineon Technologies