IXFN44N80P
IXYS
IXYS
MOSFET N-CH 800V 39A SOT-227B
$32.94
Available to order
Reference Price (USD)
10+
$21.40500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the IXFN44N80P single MOSFET from IXYS. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust IXYS's IXFN44N80P for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 694W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
Related Products
Diodes Incorporated
DMN2710UTQ-13
STMicroelectronics
STB47N50DM6AG
onsemi
VN2222LLRL
onsemi
NTMFS4121NT1G
Micro Commercial Co
SI3420A-TP
Wolfspeed, Inc.
C3M0025065J1
Panjit International Inc.
PJQ4460AP-AU_R2_000A1
Vishay Siliconix
SUG80050E-GE3
IXYS
IXTR102N65X2
Infineon Technologies