IXFN56N90P
IXYS
IXYS
MOSFET N-CH 900V 56A SOT-227B
$57.80
Available to order
Reference Price (USD)
1+
$43.94000
10+
$41.08800
30+
$38.00000
100+
$35.62500
250+
$33.25000
Exquisite packaging
Discount
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The IXFN56N90P from IXYS redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IXFN56N90P offers the precision and reliability you need. Trust IXYS to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 135mOhm @ 28A, 10V
- Vgs(th) (Max) @ Id: 6.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1000W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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