IXFN80N60P3
IXYS
IXYS
MOSFET N-CH 600V 66A SOT-227B
$31.31
Available to order
Reference Price (USD)
1+
$21.20000
10+
$19.61000
100+
$16.74800
500+
$14.84000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXFN80N60P3 from IXYS redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IXFN80N60P3 offers the precision and reliability you need. Trust IXYS to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 70mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 960W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
Related Products
Nexperia USA Inc.
BUK9605-30A,118
Infineon Technologies
IRFB4310ZPBF
Vishay Siliconix
SQD100N04-3M6L_GE3
IXYS
IXFH78N60X3
Vishay Siliconix
SI4435FDY-T1-GE3
STMicroelectronics
STH320N4F6-2
Vishay Siliconix
SQJQ186E-T1_GE3
Rohm Semiconductor
RTR025N05HZGTL
Fairchild Semiconductor
FDB6690S
onsemi