IXFN82N60P
IXYS
IXYS
MOSFET N-CH 600V 72A SOT-227B
$38.34
Available to order
Reference Price (USD)
1+
$29.04000
10+
$26.86200
30+
$24.68400
100+
$22.94160
250+
$21.05400
Exquisite packaging
Discount
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The IXFN82N60P by IXYS is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IXFN82N60P is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 75mOhm @ 41A, 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1040W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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