IXFP130N10T2
IXYS
IXYS
MOSFET N-CH 100V 130A TO220AB
$5.27
Available to order
Reference Price (USD)
50+
$2.92500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the IXFP130N10T2 from IXYS, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IXFP130N10T2 ensures reliable performance in demanding environments. Upgrade your circuit designs with IXYS's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 9.1mOhm @ 65A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Infineon Technologies
IRFP150NPBF
Vishay Siliconix
SQ9407EY-T1_GE3
Fairchild Semiconductor
FQD630TF
Infineon Technologies
IRF7240TRPBF
Vishay Siliconix
SISS04DN-T1-GE3
NXP USA Inc.
PH6530AL115
STMicroelectronics
STP7N80K5
Fairchild Semiconductor
FQI50N06TU
Renesas Electronics America Inc
2SK3116B-S19-AY
Vishay Siliconix