IXFP18N65X2M
IXYS
IXYS
MOSFET N-CH 650V 18A TO220
$3.62
Available to order
Reference Price (USD)
1+
$3.62453
500+
$3.5882847
1000+
$3.5520394
1500+
$3.5157941
2000+
$3.4795488
2500+
$3.4433035
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the IXFP18N65X2M single MOSFET from IXYS. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust IXYS's IXFP18N65X2M for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 290W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Isolated Tab
- Package / Case: TO-220-3 Full Pack, Isolated Tab
Related Products
Vishay Siliconix
SI7850DP-T1-GE3
Vishay Siliconix
SI7190ADP-T1-RE3
Infineon Technologies
IRF40B207
Diodes Incorporated
DMP56D0UFB-7B
Nexperia USA Inc.
BUK765R0-100E,118
Harris Corporation
HUF75639S3
STMicroelectronics
STP32N65M5
IXYS
IXFH160N15T2
Vishay Siliconix
SIHG22N50D-GE3
onsemi