IXFH160N15T2
IXYS
IXYS
MOSFET N-CH 150V 160A TO247AD
$8.82
Available to order
Reference Price (USD)
30+
$5.44500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the IXFH160N15T2 from IXYS, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IXFH160N15T2 ensures reliable performance in demanding environments. Upgrade your circuit designs with IXYS's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 253 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 880W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
Related Products
Vishay Siliconix
SIHG22N50D-GE3
onsemi
FQB5N60CTM-WS
Alpha & Omega Semiconductor Inc.
AOTF7N60FD
Infineon Technologies
IRF3710ZPBF
onsemi
NVMFS6H818NT1G
Panjit International Inc.
PJQ5428_R2_00001
onsemi
FDS6692A
Infineon Technologies
IAUS300N08S5N012ATMA1
Toshiba Semiconductor and Storage
TJ90S04M3L,LXHQ
Vishay Siliconix