PJQ5428_R2_00001
Panjit International Inc.
Panjit International Inc.
30V N-CHANNEL ENHANCEMENT MODE M
$1.43
Available to order
Reference Price (USD)
1+
$1.43000
500+
$1.4157
1000+
$1.4014
1500+
$1.3871
2000+
$1.3728
2500+
$1.3585
Exquisite packaging
Discount
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Meet the PJQ5428_R2_00001 by Panjit International Inc., a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The PJQ5428_R2_00001 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Panjit International Inc..
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6771 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN5060-8
- Package / Case: 8-PowerVDFN
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