NVMFS6H818NT1G
onsemi
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
$3.00
Available to order
Reference Price (USD)
1,500+
$1.36213
3,000+
$1.26819
7,500+
$1.22122
Exquisite packaging
Discount
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The NVMFS6H818NT1G from onsemi redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the NVMFS6H818NT1G offers the precision and reliability you need. Trust onsemi to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 123A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 190µA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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