IXFP4N100P
IXYS
IXYS
MOSFET N-CH 1000V 4A TO220AB
$2.83
Available to order
Reference Price (USD)
50+
$2.25000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the IXFP4N100P by IXYS, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IXFP4N100P is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
IXYS Integrated Circuits Division
CPC3902ZTR
Fairchild Semiconductor
FDMS8560S
Diodes Incorporated
DMN2991UT-13
Vishay Siliconix
SIR826BDP-T1-RE3
STMicroelectronics
STD96N3LLH6
Infineon Technologies
SPP11N60C3XKSA1
Renesas Electronics America Inc
UPA2807T1L-E1-AT
Alpha & Omega Semiconductor Inc.
AON6234
Vishay Siliconix
SQ2348ES-T1_GE3
Fairchild Semiconductor