Shopping cart

Subtotal: $0.00

IXFQ22N60P3

IXYS
IXFQ22N60P3 Preview
IXYS
MOSFET N-CH 600V 22A TO3P
$9.65
Available to order
Reference Price (USD)
1+
$4.37000
30+
$3.51000
120+
$3.19800
510+
$2.58961
1,020+
$2.18400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3

Related Products

Diodes Incorporated

DMN2024U-7

Rohm Semiconductor

RF4E110GNTR

Rohm Semiconductor

RD3P050SNFRATL

Toshiba Semiconductor and Storage

TK5R3A06PL,S4X

Infineon Technologies

IPD90N06S407ATMA2

Infineon Technologies

IPW65R230CFD7AXKSA1

Goford Semiconductor

GT105N10F

Toshiba Semiconductor and Storage

T2N7002AK,LM

Top