IXFT320N10T2
IXYS
IXYS
MOSFET N-CH 100V 320A TO268
$20.99
Available to order
Reference Price (USD)
1+
$14.37000
30+
$12.08067
120+
$11.10100
510+
$9.46851
1,020+
$9.14200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the IXFT320N10T2 single MOSFET from IXYS. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust IXYS's IXFT320N10T2 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 26000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1000W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268AA
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Related Products
STMicroelectronics
STF6N65M2
STMicroelectronics
STD7NK40ZT4
STMicroelectronics
STF6N95K5
IXYS
IXTT100N25P
Infineon Technologies
BSZ42DN25NS3GATMA1
Infineon Technologies
IRFP7537PBF
Toshiba Semiconductor and Storage
TK750A60F,S4X
onsemi
HUF75645S3ST
onsemi
NVMFS6H852NT1G
Toshiba Semiconductor and Storage