TK6R8A08QM,S4X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
UMOS10 TO-220SIS 80V 6.8MOHM
$1.31
Available to order
Reference Price (USD)
1+
$1.31000
500+
$1.2969
1000+
$1.2838
1500+
$1.2707
2000+
$1.2576
2500+
$1.2445
Exquisite packaging
Discount
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Enhance your electronic projects with the TK6R8A08QM,S4X single MOSFET from Toshiba Semiconductor and Storage. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Toshiba Semiconductor and Storage's TK6R8A08QM,S4X for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 6.8mOhm @ 29A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 41W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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