RJK0368DPA-00#J0
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 30V 20A 8WPAK
$0.44
Available to order
Reference Price (USD)
1+
$0.44000
500+
$0.4356
1000+
$0.4312
1500+
$0.4268
2000+
$0.4224
2500+
$0.418
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RJK0368DPA-00#J0 by Renesas Electronics America Inc is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the RJK0368DPA-00#J0 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WPAK
- Package / Case: 8-PowerWDFN
Related Products
Texas Instruments
CSD13202Q2
onsemi
FDMA510PZ
Infineon Technologies
IGW40N60TP
Vishay Siliconix
SQJQ466E-T1_GE3
Infineon Technologies
IRLR3410TRRPBF
Fairchild Semiconductor
FDB6670AS
Diodes Incorporated
DMP3010LK3-13
Rohm Semiconductor
2SK3018T106
Nexperia USA Inc.
PSMN011-100YSFX
Renesas Electronics America Inc