IXGH16N170
IXYS
IXYS
IGBT 1700V 32A 190W TO247AD
$12.41
Available to order
Reference Price (USD)
1+
$11.00000
10+
$9.89900
30+
$9.01900
120+
$8.13908
270+
$7.47915
510+
$6.81922
1,020+
$5.93932
Exquisite packaging
Discount
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Optimize your power systems with the IXGH16N170 Single IGBT transistor from IXYS. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IXGH16N170 delivers consistent and reliable operation. Trust IXYS's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 32 A
- Current - Collector Pulsed (Icm): 80 A
- Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 16A
- Power - Max: 190 W
- Switching Energy: 9.3mJ (off)
- Input Type: Standard
- Gate Charge: 78 nC
- Td (on/off) @ 25°C: 45ns/400ns
- Test Condition: 1360V, 16A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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