IXGQ85N33PCD1
IXYS
IXYS
IGBT 330V 85A 150W TO3P
$6.66
Available to order
Reference Price (USD)
30+
$2.31000
Exquisite packaging
Discount
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Upgrade your power management systems with the IXGQ85N33PCD1 Single IGBT transistor from IXYS. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IXGQ85N33PCD1 provides reliable and efficient operation. IXYS's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IXGQ85N33PCD1 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 330 V
- Current - Collector (Ic) (Max): 85 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
- Power - Max: 150 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 80 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): 250 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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