IXTA130N10T7
IXYS
IXYS
MOSFET N-CH 100V 130A TO263
$4.22
Available to order
Reference Price (USD)
50+
$2.29500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXTA130N10T7 from IXYS redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IXTA130N10T7 offers the precision and reliability you need. Trust IXYS to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7 (IXTA)
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Related Products
Micro Commercial Co
MCU80N03-TP
onsemi
NVBG160N120SC1
onsemi
FCH077N65F-F085
Infineon Technologies
IRLMS1503TRPBF
STMicroelectronics
STW19NM50N
onsemi
NTMS4937NR2G
Rohm Semiconductor
R5016FNX
Diodes Incorporated
DMG4466SSS-13
Rohm Semiconductor
RD3L220SNFRATL
Toshiba Semiconductor and Storage