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IXTB30N100L

IXYS
IXTB30N100L Preview
IXYS
MOSFET N-CH 1000V 30A PLUS264
$56.19
Available to order
Reference Price (USD)
25+
$43.07200
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 20V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 20 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 800W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS264™
  • Package / Case: TO-264-3, TO-264AA

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