NTTFS6H850NTAG
onsemi

onsemi
MOSFET N-CH 80V 11A/68A 8WDFN
$2.16
Available to order
Reference Price (USD)
1,500+
$0.92207
3,000+
$0.85848
7,500+
$0.82668
10,500+
$0.80934
Exquisite packaging
Discount
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Meet the NTTFS6H850NTAG by onsemi, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The NTTFS6H850NTAG stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose onsemi.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 70µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN