IXTH1N200P3
IXYS
IXYS
MOSFET N-CH 2000V 1A TO247
$9.22
Available to order
Reference Price (USD)
1+
$6.33000
30+
$5.18667
120+
$4.68050
510+
$3.92151
1,020+
$3.54200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the IXTH1N200P3 single MOSFET from IXYS. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust IXYS's IXTH1N200P3 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 2000 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
Related Products
Microchip Technology
2N6661
Microchip Technology
VP0550N3-G
Vishay Siliconix
SQJ423EP-T1_BE3
Vishay Siliconix
SUM90220E-GE3
Alpha & Omega Semiconductor Inc.
AON7506
onsemi
FCB199N65S3
STMicroelectronics
STP18N55M5
Fairchild Semiconductor
HUFA75639S3ST
Alpha & Omega Semiconductor Inc.
AON6224
Infineon Technologies