IXTH52N65X
IXYS
IXYS
MOSFET N-CH 650V 52A TO247
$10.86
Available to order
Reference Price (USD)
60+
$7.09300
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the IXTH52N65X single MOSFET from IXYS. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IXTH52N65X combines cutting-edge technology with IXYS's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 68mOhm @ 26A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 660W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
Related Products
onsemi
NVMFS6H800NLT1G
Infineon Technologies
IPW60R120C7XKSA1
Toshiba Semiconductor and Storage
SSM3J338R,LF
Taiwan Semiconductor Corporation
TSM3446CX6 RFG
Texas Instruments
NTK3134NT1H
Torex Semiconductor Ltd
XP236N2001TR-G
Fairchild Semiconductor
HUFA75321D3ST
Infineon Technologies
IRL60S216
Alpha & Omega Semiconductor Inc.
AOK29S50L
Fairchild Semiconductor