IXTN170P10P
IXYS
IXYS
MOSFET P-CH 100V 170A SOT227B
$37.01
Available to order
Reference Price (USD)
1+
$26.00000
10+
$24.05000
30+
$22.10000
100+
$20.54000
250+
$18.85000
500+
$17.94000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXTN170P10P from IXYS redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IXTN170P10P offers the precision and reliability you need. Trust IXYS to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 890W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
Related Products
Alpha & Omega Semiconductor Inc.
AON6484
STMicroelectronics
STB120N4LF6
Fairchild Semiconductor
FCPF2250N80Z
Diodes Incorporated
DMP2033UVT-7
Infineon Technologies
IAUA250N08S5N018AUMA1
Infineon Technologies
IRFP3703PBF
Vishay Siliconix
SIA456DJ-T1-GE3
Nexperia USA Inc.
PSMN013-60YLX
Fairchild Semiconductor
FDP040N06
Toshiba Semiconductor and Storage