IXTN30N100L
IXYS
IXYS
MOSFET N-CH 1000V 30A SOT227B
$69.43
Available to order
Reference Price (USD)
1+
$54.43000
10+
$50.89700
25+
$47.07200
100+
$44.13000
Exquisite packaging
Discount
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Meet the IXTN30N100L by IXYS, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IXTN30N100L stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose IXYS.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 450mOhm @ 15A, 20V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 20 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 800W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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