R6070JNZ4C13
Rohm Semiconductor
Rohm Semiconductor
600V 70A TO-247, PRESTOMOS WITH
$17.74
Available to order
Reference Price (USD)
1+
$17.74000
500+
$17.5626
1000+
$17.3852
1500+
$17.2078
2000+
$17.0304
2500+
$16.853
Exquisite packaging
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Optimize your power electronics with the R6070JNZ4C13 single MOSFET from Rohm Semiconductor. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the R6070JNZ4C13 combines cutting-edge technology with Rohm Semiconductor's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 58mOhm @ 35A, 15V
- Vgs(th) (Max) @ Id: 7V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 15 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 770W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247G
- Package / Case: TO-247-3
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