TK10Q60W,S1VQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 9.7A IPAK
$2.45
Available to order
Reference Price (USD)
75+
$2.22747
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The TK10Q60W,S1VQ by Toshiba Semiconductor and Storage is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the TK10Q60W,S1VQ is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Stub Leads, IPak
Related Products
IXYS
IXTT96N15P
Panjit International Inc.
PJS6421_S1_00001
IXYS
IXTP12N65X2
Fairchild Semiconductor
FQU1N80TU
STMicroelectronics
STD16NF25
Vishay Siliconix
SIR402DP-T1-GE3
Toshiba Semiconductor and Storage
TPH3R704PL,L1Q
Infineon Technologies
IPB050N06NGATMA1
IXYS
IXTA80N075L2
Vishay Siliconix