IRFD224PBF
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 250V 630MA 4DIP
$1.56
Available to order
Reference Price (USD)
1+
$1.66000
10+
$1.46600
100+
$1.15890
500+
$0.89870
1,000+
$0.70950
2,500+
$0.66220
5,000+
$0.62909
Exquisite packaging
Discount
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The IRFD224PBF by Vishay Siliconix is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IRFD224PBF is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.1Ohm @ 380mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: 4-HVMDIP
- Package / Case: 4-DIP (0.300", 7.62mm)
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