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IXTP60N10T

IXYS
IXTP60N10T Preview
IXYS
MOSFET N-CH 100V 60A TO220AB
$2.75
Available to order
Reference Price (USD)
1+
$1.89000
50+
$1.52500
100+
$1.37250
500+
$1.06750
1,000+
$0.88450
2,500+
$0.85400
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 176W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3

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