IXTP8N70X2M
IXYS
IXYS
MOSFET N-CH 700V 4A TO220
$3.33
Available to order
Reference Price (USD)
50+
$2.05000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXTP8N70X2M by IXYS is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose IXYS for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 32W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Isolated Tab
- Package / Case: TO-220-3 Full Pack, Isolated Tab
Related Products
STMicroelectronics
STP80NF12
Microchip Technology
APT12080LVRG
Infineon Technologies
SPP04N80C3XKSA1
Nexperia USA Inc.
PSMN4R8-100YSEX
Harris Corporation
IRFP141
Infineon Technologies
IPI023NE7N3G
Diodes Incorporated
DMN6075SQ-13
onsemi
FDMC8854
Fairchild Semiconductor
FQB14N30TM
Infineon Technologies