Shopping cart

Subtotal: $0.00

IXTT24P20

IXYS
IXTT24P20 Preview
IXYS
MOSFET P-CH 200V 24A TO268
$11.60
Available to order
Reference Price (USD)
30+
$7.40067
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268AA
  • Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Related Products

Fairchild Semiconductor

ISL9N308AD3

Vishay Siliconix

SIHB24N65ET1-GE3

Nexperia USA Inc.

PSMN6R5-80BS,118

Diodes Incorporated

ZXMN2B01FTA

Infineon Technologies

AUIRFR3806TRL

Diodes Incorporated

DMP2130L-7

Infineon Technologies

IPI60R299CPXKSA1

Renesas Electronics America Inc

2SK2738-E

Top