IXTT69N30P
IXYS
IXYS
MOSFET N-CH 300V 69A TO268
$10.76
Available to order
Reference Price (USD)
30+
$7.79000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the IXTT69N30P single MOSFET from IXYS. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust IXYS's IXTT69N30P for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300 V
- Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 49mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4960 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268AA
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Related Products
Harris Corporation
RFP4N05
Panjit International Inc.
PJD4NA65H_L2_00001
Diodes Incorporated
ZXMP4A16GQTA
Texas Instruments
CSD25501F3
onsemi
FQPF7N65C
STMicroelectronics
STP20N65M5
Toshiba Semiconductor and Storage
TK6A65W,S5X
Vishay Siliconix
SIHA120N60E-GE3
onsemi
NTK3043NT5G
onsemi