IXXH75N60B3D1
IXYS
IXYS
IGBT 600V 160A 750W TO247
$13.13
Available to order
Reference Price (USD)
30+
$9.53567
Exquisite packaging
Discount
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Enhance your electronic projects with the IXXH75N60B3D1 Single IGBT transistor from IXYS. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IXXH75N60B3D1 ensures precision and reliability. IXYS's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IXXH75N60B3D1 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 160 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A
- Power - Max: 750 W
- Switching Energy: 1.7mJ (on), 1.5mJ (off)
- Input Type: Standard
- Gate Charge: 107 nC
- Td (on/off) @ 25°C: 35ns/118ns
- Test Condition: 400V, 60A, 5Ohm, 15V
- Reverse Recovery Time (trr): 25 ns
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXXH)
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