IXXN100N60B3H1
IXYS
IXYS
IGBT MOD 600V 170A 500W SOT227B
$38.39
Available to order
Reference Price (USD)
10+
$27.38900
Exquisite packaging
Discount
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Experience next-generation power control with IXYS's IXXN100N60B3H1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The IXXN100N60B3H1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the IXXN100N60B3H1 in your next-generation HVDC systems or particle accelerator power supplies. IXYS delivers reliability where it matters most with the IXXN100N60B3H1 IGBT module.
Specifications
- Product Status: Active
- IGBT Type: PT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 170 A
- Power - Max: 500 W
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
- Current - Collector Cutoff (Max): 50 µA
- Input Capacitance (Cies) @ Vce: 4.86 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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