IXYT55N120A4HV
IXYS
IXYS
IGBT GENX4 1200V 55A TO268HV
$12.38
Available to order
Reference Price (USD)
1+
$12.38000
500+
$12.2562
1000+
$12.1324
1500+
$12.0086
2000+
$11.8848
2500+
$11.761
Exquisite packaging
Discount
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Optimize your power systems with the IXYT55N120A4HV Single IGBT transistor from IXYS. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IXYT55N120A4HV delivers consistent and reliable operation. Trust IXYS's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 175 A
- Current - Collector Pulsed (Icm): 350 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 55A
- Power - Max: 650 W
- Switching Energy: 2.3mJ (on), 5.3mJ (off)
- Input Type: Standard
- Gate Charge: 110 nC
- Td (on/off) @ 25°C: 23ns/300ns
- Test Condition: 600V, 40A, 5Ohm, 15V
- Reverse Recovery Time (trr): 35 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268HV (IXYT)
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