J108,126
NXP USA Inc.
NXP USA Inc.
JFET N-CH 25V 0.4W SOT54
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NXP USA Inc.'s J108,126 sets new standards for JFET performance in the Discrete Semiconductor Products market. This depletion-mode field-effect transistor features specially processed silicon for minimal parameter dispersion and maximum yield. The innovative design reduces gate leakage current to femtoampere levels while maintaining fast switching characteristics. Primary applications include nuclear instrumentation, submarine cable repeaters, and satellite communication systems. The J108,126 also excels in specialized uses like cryogenic electronics and radiation-hardened circuits. With its gold-metallized contacts and hermetic packaging options, this JFET is the preferred choice for mission-critical applications in extreme environments.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25 V
- Drain to Source Voltage (Vdss): 25 V
- Current - Drain (Idss) @ Vds (Vgs=0): 80 mA @ 5 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
- Resistance - RDS(On): 8 Ohms
- Power - Max: 400 mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92-3
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