Shopping cart

Subtotal: $0.00

JAN1N5614

Microchip Technology
JAN1N5614 Preview
Microchip Technology
DIODE GEN PURP 200V 1A AXIAL
$4.31
Available to order
Reference Price (USD)
1+
$7.18000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2 µs
  • Current - Reverse Leakage @ Vr: 500 nA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 200°C

Related Products

Vishay General Semiconductor - Diodes Division

BAV19W-HE3-08

Vishay General Semiconductor - Diodes Division

V15P12-M3/H

Microchip Technology

JANTXV1N5619

Vishay General Semiconductor - Diodes Division

NSB8DT-E3/45

Vishay General Semiconductor - Diodes Division

SD103BWS-HG3-18

Vishay General Semiconductor - Diodes Division

VS-20ETF12-M3

Microchip Technology

JAN1N4454-1/TR

Taiwan Semiconductor Corporation

1N5407G A0G

Panjit International Inc.

PG156R_R2_00001

Panjit International Inc.

BD5100YS_S2_00001

Top