Shopping cart

Subtotal: $0.00

JANTX1N5811US

Microchip Technology
JANTX1N5811US Preview
Microchip Technology
DIODE GEN PURP 150V 3A B-MELF
$8.25
Available to order
Reference Price (USD)
1+
$11.28000
10+
$10.14800
100+
$8.34350
500+
$6.99050
1,000+
$6.31400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 150 V
  • Capacitance @ Vr, F: 60pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, B
  • Supplier Device Package: B, SQ-MELF
  • Operating Temperature - Junction: -65°C ~ 175°C

Related Products

Diodes Incorporated

B250A-13-F

Microchip Technology

JANTXV1N6640/TR

Diodes Incorporated

ES3C-13-F

Microchip Technology

UFS320JE3/TR13

Bourns Inc.

CD1206-B2100

Microchip Technology

JANTXV1N3595UR-1/TR

Vishay General Semiconductor - Diodes Division

S1PD-M3/84A

Solid State Inc.

16FR30

Taiwan Semiconductor Corporation

RS1MLSHRVG

Vishay General Semiconductor - Diodes Division

SE30DT12-M3/I

Top