KSD1691GSTU
onsemi

onsemi
TRANS NPN 60V 5A TO126-3
$0.79
Available to order
Reference Price (USD)
1+
$0.64000
10+
$0.55000
100+
$0.41390
500+
$0.32784
1,000+
$0.25612
Exquisite packaging
Discount
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The KSD1691GSTU from onsemi is a high-quality Bipolar Junction Transistor (BJT) designed for precision and durability. This single BJT transistor is perfect for applications requiring fast switching and low power consumption, such as portable electronics and IoT devices. With its compact size and robust construction, the KSD1691GSTU is a reliable choice for both commercial and industrial use. Trust onsemi to provide top-tier discrete semiconductor products that enhance the performance and longevity of your electronic systems.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 1V
- Power - Max: 1.3 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126-3