KSD363RTU
onsemi
onsemi
TRANS NPN 120V 6A TO220-3
$0.92
Available to order
Reference Price (USD)
1+
$0.93000
10+
$0.82200
100+
$0.63010
500+
$0.49812
1,000+
$0.39850
Exquisite packaging
Discount
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Optimize your electronic systems with the KSD363RTU Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the KSD363RTU delivers superior performance in diverse environments. onsemi's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 6 A
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
- Current - Collector Cutoff (Max): 1mA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
- Power - Max: 40 W
- Frequency - Transition: 10MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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