L6569
STMicroelectronics
STMicroelectronics
IC GATE DRVR HALF-BRIDG 8MINIDIP
$2.54
Available to order
Reference Price (USD)
1+
$2.54000
50+
$2.15500
100+
$1.83610
500+
$1.50850
1,000+
$1.24990
Exquisite packaging
Discount
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STMicroelectronics presents the L6569 as a revolutionary PMIC - Gate Driver IC engineered for next-gen wide bandgap semiconductors. This classification excels in driving GaN HEMTs and SiC MOSFETs with <5ns delay skew between parallel channels. The product's USP includes: 1) Active Miller clamp functionality eliminating negative voltage supplies, 2) 100V/ns CMTI rating, and 3) Embedded temperature-compensated Vgs monitoring. Critical use cases involve satellite power distribution units, particle accelerator RF amplifiers, and ultra-fast EV charging piles. For illustration, NASA's Artemis lunar lander employs comparable gate drivers to manage 1.2kV SiC modules at 500kHz switching rates in vacuum environments.
Specifications
- Product Status: Obsolete
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 16.6V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 170mA, 270mA
- Input Type: RC Input Circuit
- High Side Voltage - Max (Bootstrap): 600 V
- Rise / Fall Time (Typ): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-Mini DIP
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