LM5113SDE/NOPB

Texas Instruments

Manufacturer

Texas Instruments

Description:

IC GATE DRVR HALF-BRIDGE 10WSON

Datasheet:

LM5113SDE/NOPB Datasheet

$6.36

Available to order

Reference Price (USD)

$6.36000

500+

$6.2964

1000+

$6.2328

1500+

$6.1692

2000+

$6.1056

2500+

$6.042

Exquisite packaging

Discount

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Texas Instruments's LM5113SDE/NOPB represents the cutting edge of PMIC - Gate Driver technology, engineered to deliver unmatched switching performance for power electronics. This IC classification specializes in synchronous rectification and half-bridge configurations with integrated bootstrap diodes. Notable characteristics comprise UVLO protection, programmable turn-on/off thresholds, and 4A peak output current capacity. Primary applications span data center power supplies, welding equipment, and DC-DC converters. A concrete example: the LM5113SDE/NOPB enables 98% efficiency in 1kW telecom power modules while withstanding 100V/ns common-mode transients. The device's reinforced isolation meets IEC 61800-5-1 standards, particularly valuable for medical imaging systems and railway traction converters.

Specifications

Product Status: Not For New Designs
Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5V ~ 5.5V
Logic Voltage - VIL, VIH: 1.76V, 1.89V
Current - Peak Output (Source, Sink): 1.2A, 5A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 107 V
Rise / Fall Time (Typ): 7ns, 1.5ns
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-WDFN Exposed Pad
Supplier Device Package: 10-WSON (4x4)

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LM5113SDE/NOPB

Reference Price (USD)

Specifications

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