LS26VNS DFN 8L
Linear Integrated Systems, Inc.
Linear Integrated Systems, Inc.
SINGLE N-CHANNEL JFET, VOLTAGE C
$3.03
Available to order
Reference Price (USD)
1+
$3.03000
500+
$2.9997
1000+
$2.9694
1500+
$2.9391
2000+
$2.9088
2500+
$2.8785
Exquisite packaging
Discount
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Linear Integrated Systems, Inc.'s LS26VNS DFN 8L sets new standards for JFET performance in the Discrete Semiconductor Products market. This depletion-mode field-effect transistor features specially processed silicon for minimal parameter dispersion and maximum yield. The innovative design reduces gate leakage current to femtoampere levels while maintaining fast switching characteristics. Primary applications include nuclear instrumentation, submarine cable repeaters, and satellite communication systems. The LS26VNS DFN 8L also excels in specialized uses like cryogenic electronics and radiation-hardened circuits. With its gold-metallized contacts and hermetic packaging options, this JFET is the preferred choice for mission-critical applications in extreme environments.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40 V
- Drain to Source Voltage (Vdss): 40 V
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: 10 mA
- Voltage - Cutoff (VGS off) @ Id: 6 V @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 20V
- Resistance - RDS(On): 38 Ohms
- Power - Max: 350 mW
- Operating Temperature: -55°C ~ 135°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-VFDFN Exposed Pad
- Supplier Device Package: 8-DFN (2x2)
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