LSIC1MO120E0160
Littelfuse Inc.
Littelfuse Inc.
SICFET N-CH 1200V 22A TO247-3
$12.18
Available to order
Reference Price (USD)
1+
$11.00000
10+
$10.00000
25+
$9.25000
100+
$8.50000
450+
$7.75000
900+
$7.00000
Exquisite packaging
Discount
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The LSIC1MO120E0160 from Littelfuse Inc. redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the LSIC1MO120E0160 offers the precision and reliability you need. Trust Littelfuse Inc. to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 20V
- Vgs(th) (Max) @ Id: 4V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
- Vgs (Max): +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD
- Package / Case: TO-247-3
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