LTC7000JMSE-1#TRPBF
Analog Devices Inc.
Analog Devices Inc.
FAST 150V PROTECTED HI SIDE NMOS
$4.50
Available to order
Reference Price (USD)
1+
$4.50000
500+
$4.455
1000+
$4.41
1500+
$4.365
2000+
$4.32
2500+
$4.275
Exquisite packaging
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Analog Devices Inc. presents the LTC7000JMSE-1#TRPBF as a revolutionary PMIC - Gate Driver IC engineered for next-gen wide bandgap semiconductors. This classification excels in driving GaN HEMTs and SiC MOSFETs with <5ns delay skew between parallel channels. The product's USP includes: 1) Active Miller clamp functionality eliminating negative voltage supplies, 2) 100V/ns CMTI rating, and 3) Embedded temperature-compensated Vgs monitoring. Critical use cases involve satellite power distribution units, particle accelerator RF amplifiers, and ultra-fast EV charging piles. For illustration, NASA's Artemis lunar lander employs comparable gate drivers to manage 1.2kV SiC modules at 500kHz switching rates in vacuum environments.
Specifications
- Product Status: Active
- Driven Configuration: High-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 3.5V ~ 135V
- Logic Voltage - VIL, VIH: 1.8V, 1.7V
- Current - Peak Output (Source, Sink): -
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 90ns, 40ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-TFSOP (0.118", 3.00mm Width), 12 Leads, Exposed Pad
- Supplier Device Package: 16-MSOP-EP
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